Skip to main content
Cyber Security and Resilience Community
Cyber Security and Resilience Community
People
Faculty
Research Scientists
Postdoctoral Fellows
All People
Research Groups
Cyber Security and Resilience Technology (CyberSaR)
Roberto Di Pietro Research Group (R-Pietro)
Security Research Bearing Experimental Results (SeRBER)
Research Strategy
Ta2O5
Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics
1 min read ·
Wed, Apr 26 2017
News
Circuits
Ta2O5
Mrinal K. Hota, et al., "Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics." A CS applied materials & interfaces 9 (26), 2017, 21856. We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a
