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memory applications
Thin PZT‐based ferroelectric capacitors on flexible silicon for nonvolatile memory applications
1 min read ·
Sun, Apr 26 2015
News
Thin PZT‐based ferroelectric capacitors
silicon
memory applications
Mohamed T. Ghoneim, et al., "Thin PZT‐based ferroelectric capacitors on flexible silicon for nonvolatile memory applications." Advanced Electronic Materials 1 (6), 2015, 1500045. A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)‐(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol‐gel coating cycles required (i.e., more cost‐effective), and, fabrication wise, is more suitable for further scaling
